Process for developing a positive-working photoresist containing

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430331, G03F 730, G03F 732

Patent

active

052524361

ABSTRACT:
An aqueous developer suitable in particular for developing photoresists which contain a phenolic resin and an onium salt contains from 0.5 to 5 % by weight of a tetraalkylammonium hydroxide and from 5 to 25% by weight of at least one amine of the general formula ##STR1## where R.sup.1, R.sup.2 and R.sup.3 are identical or different and each is hydrogen, alkyl, hydroxyalkyl or aminoalkyl, or two of R.sup.1 to R.sup.3 combine to form a N-containing ring, with at least one of R.sup.1 to R.sup.3 being hydroxyalkyl or aminoalkyl.

REFERENCES:
patent: 4576903 (1986-03-01), Baron et al.
patent: 4628023 (1986-12-01), Cawston et al.
patent: 4678737 (1987-07-01), Schneller et al.
patent: 4716098 (1987-12-01), Mack et al.
patent: 4786580 (1988-11-01), Hsieh et al.
patent: 4808513 (1989-02-01), Lazarus et al.
patent: 4820621 (1989-04-01), Tanka et al.
patent: 4833067 (1989-05-01), Tanaka et al.
patent: 4883740 (1989-11-01), Schwalm et al.
patent: 4894311 (1990-01-01), Uenishi et al.
patent: 4904571 (1990-02-01), Miyashita et al.
patent: 4997748 (1991-03-01), Takeda et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for developing a positive-working photoresist containing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for developing a positive-working photoresist containing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for developing a positive-working photoresist containing will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1903616

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.