Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-04-21
2000-06-20
Elms, Richard T.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438618, 438623, 438627, 438784, 438788, H01L 2144, H01L 214763
Patent
active
060777648
ABSTRACT:
A silicon oxide film is deposited on a substrate by first introducing a process gas into a chamber. The process gas includes a gaseous source of silicon (such as silane), a gaseous source of fluorine (such as SiF.sub.4), a gaseous source of oxygen (such as nitrous oxide), and a gaseous source of nitrogen (such as N.sub.2). A plasma is formed from the process gas by applying a RF power component. Deposition is carried out at a rate of at least about 1.5 .mu.m/min. The resulting FSG film is stable and has a low dielectric constant.
REFERENCES:
patent: 5261961 (1993-11-01), Takasu et al.
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5661093 (1997-08-01), Ravi et al.
patent: 5750211 (1998-05-01), Weise et al.
patent: 5759906 (1998-06-01), Lou
patent: 5763010 (1998-06-01), Gou et al.
patent: 5807785 (1998-09-01), Ravi
patent: 5827785 (1998-10-01), Bhan et al.
patent: 5858869 (1999-01-01), Chen et al.
patent: 5876798 (1999-03-01), Vassilev
patent: 5908672 (1999-06-01), Ryu et al.
T. Fukada et al., "Preparation of SiOF Films With Low Dielectric Constant By ECR Plasma CVD," DUMIC Conference, Feb. 21-22, 1995, pp. 43-49, Feb. 1995.
L.Q. Qian et al., "High Density Plasma Deposition and Deep Submicron Gap Fill With Low Dielectric Constant SiOF Films," DUMIC Conference, Feb. 21-22, 1995, pp. 50-56, Feb. 1995.
N. Hayasaka et al., High-Quality and Low Dielectric Constant SiO.sub.2 CVD Using High Density Plasma, 1993 Dry Process Symposium, pp. 163-168, Nov. 1993.
R. Laxman. "Low .di-elect cons. Dielectrics: CVD Fluorinated Silicon Dioxides," Semiconductor International, pp. 71-74, May 1995.
C. Falcony et al., "High Ouality, High Deposition Rate SiO.sub.2 Films At Low Temperatures Using Silicon Fluorides and Plasma Assisted Deposition Techniques," J. Vac. Sci. Technol., pp. 2945-2949, Nov./Dec. 1993.
G. Passemard et al., "Fluorine Stability in Fluorosilicate Glass and Effect on Dielectric Properties," DUMIC Conference, Feb. 20-21, 1996, pp. 145-152, Feb. 1996.
T. Tamura et al., "Preparation of Stable Fluorine-Doped Silicon Oxide Film By Biased Helicon Plasma CVD," DUMIC Conference, Feb. 20-21, 1996, pp. 231-238, Feb. 1996.
A. Saproo et al., "Characterization of a Process for Deposition of Fluorine Doped SiO.sub.2 From a High Density Plasma Source," DUMIC Conference, Feb. 20-21, 1996, pp. 239-246, Feb. 1996.
J. Hsieh et al., "Deposition of Highly-Doped F-TEOS in Nitrouse Oxide-Based PECVD Process for IMD and Passivation Applications," DUMIC Conference, Feb. 20-21, 1996, pp. 265-268, Feb. 1996.
R. Swope et al., "Nitrous Oxide Plasma Surface Treatment of PECVD FSG Films," DUMIC Conference, Feb. 20-21, 1996, pp. 295-301, Feb. 1996.
H. Miyajima et al., "Water-Absorption Mechanisms of F-Doped PECVD SiO.sub.2 With Low-Dielectric Constant," VMIC Conference, Jun. 27-29, 1995, pp. 391-393, Jun. 1995.
M. Bhan et al., "Deposition of Stable, Low K Deposition Rate SiF.sub.4 -doped TEOS Fluorinated Silicon Dioxide (SiOF) Films," Thin Solid Films, pp. 507-511 (1997).
Cheung David
Huang Judy
Sugiarto Dian
Applied Materials Inc.
Elms Richard T.
Lebentritt Michael S.
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