Process for depositing F-doped silica glass in high aspect...

Details Process for depositing F-doped silica glass in high aspect... Process for depositing F-doped silica glass in high aspect...

2005-01-25

2005-01-25

Ryan, Patrick (Department: 1745)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192350, C427S574000, C216S067000

Reexamination Certificate

active

06846391

ABSTRACT:
A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes to deposit fluorine-doped films, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an inefficient sputtering inert gas such as He and/or hydrogen. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios greater than 3.0:1 and spacings between lines less than 0.13 microns can be filled with low dielectric constant films without the formation of voids and without damaging circuit elements.

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