Process for decreasing crystal damages in the production of n-do

Details Process for decreasing crystal damages in the production of n-do Process for decreasing crystal damages in the production of n-do

1978-03-23

1981-04-07

Garris, Bradley

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG64, 176 10, C30B 3120

Patent

active

042604486

ABSTRACT:
A process for decreasing crystal damages in the production of n-doped silicon by neutron bombardment, in which phosphorus atoms are formed from silicon by nuclear transmutation, wherein the number of desired phosphorus atoms N.sub.31.sbsb.p per cc, can be calculated by the known equation

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patent: 4119441 (1978-10-01), Hass et al.
patent: 4129463 (1978-04-01), Cleland et al.
Mills et al., "Preparation . . . ", J. Elec. Chem. Soc., 2-1961, pp. 171-. 5
Klahr et al., "Neutron . . . ", Nucleonics, vol. 22, #4, pp. 62-65, 1964.
Herzer et al., "Doping . . . ", 1975.
Cheng et al., "Photoconductivity . . . ", J. of Appl. Physics, vol. 41, #6, S-1970, pp. 2627-2635.
Mirianashvili et al., "Possibility . . . ", Soviet Physic-Semiconductors, vol. 4, #10, 1612-1615, 4-71.

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