Process for controlling silicon etching by atomic hydrogen

Details Process for controlling silicon etching by atomic hydrogen Process for controlling silicon etching by atomic hydrogen

1991-09-13

1994-02-15

Thomas, Tom

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 148DIG128, 437937, H01L 21306, B44C 122

Patent

active

052863409

ABSTRACT:
A process for spatially controlling the etching of a silicon substrate by omic hydrogen. The process may be generally carried out at room temperature. The process involves implanting a boron dopant in selective portions of the silicon substrate followed by etching with atomic hydrogen. The implanted portions exhibit no etching by atomic hydrogen. A silicon device that is produced by this process is disclosed.

REFERENCES:
patent: 4285762 (1981-08-01), Moustakas
patent: 4361461 (1982-11-01), Chang
patent: 4601778 (1986-07-01), Robb
patent: 4880493 (1989-11-01), Ashby et al.
patent: 4946735 (1990-08-01), Lee et al.
patent: 4992134 (1991-02-01), Gupta et al.

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