Process for controlling dopant diffusion in a semiconductor laye

Details Process for controlling dopant diffusion in a semiconductor laye Process for controlling dopant diffusion in a semiconductor laye

1995-11-28

2000-03-28

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

438510, 438542, 438918, 257607, H01L 2120, H01L 2122

Patent

active

060431393

ABSTRACT:
Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique.

REFERENCES:
patent: 5116455 (1992-05-01), Daly
patent: 5145794 (1992-09-01), Kase et al.
patent: 5338945 (1994-08-01), Baliga et al.
Nishikawa et al., "Reduction of transient boron diffusion in preamorphized Si by carbon implantation", Appl. Phys. Lett. vol. 60, No. 18., pp. 2270-2272, Semiconductor Technology Laboratory, Tokyo, Japan, (Apr. 1992).
D.E. Carlson et al., "The Effects of Imparities on the Diffusion Length in Amorphous Silicon", Seventeenth IEEE Photovoltaic Specialists Conference--1984, Kissimmee, May 1, 1984, pp. 330-335.

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