Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-03-07
1998-02-17
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438613, H01L 2144
Patent
active
057190879
ABSTRACT:
A protective cap of dielectric material is deposited by plasma-enhanced chemical vapor deposition on the surface of electrical bonding pads of semiconductor integrated circuits prior to deposition of the final passivation layer. The protective cap serves to isolate the pad surface from electrochemical or other interaction with the etching solution used to open contact holes through the passivation layer. This prevents the formation of surface damage and residues on the pad which lead to yield and reliability problem with integrated circuits.
REFERENCES:
patent: 5136364 (1992-08-01), Byrne
patent: 5369299 (1994-11-01), Byrne
patent: 5384284 (1995-01-01), Doan et al.
patent: 5654588 (1997-08-01), Dasse et al.
Chang Wen-Cheng
Chen Sen Fu
Chu Po-Tau
Wu Jie Shing
Ackerman Stephen B.
Booth Richard A.
Niebling John
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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