Process for atomic layer deposition

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers

Reexamination Certificate

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C257SE21409, C257SE21171

Reexamination Certificate

active

07851380

ABSTRACT:
The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.

REFERENCES:
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4430149 (1984-02-01), Berkman
patent: 6821563 (2004-11-01), Yudovsky
patent: 7265003 (2007-09-01), Hoffman et al.
patent: 2005/0084610 (2005-04-01), Selitser
patent: 2006/0003485 (2006-01-01), Hoffman et al.
patent: 2006/0244107 (2006-11-01), Sugihara et al.
patent: 2007/0128858 (2007-06-01), Haukka et al.
patent: 2007/0134919 (2007-06-01), Gunji et al.
patent: 2008/0296567 (2008-12-01), Irving et al.
S.J. Lim et al., “The application of atomic layer deposition for transparent thin film transistor” IEEE Nanotechnology Materials and Devices Conference, 2006. NMDC 2006 Oct. 22, 2006 pp. 634-635.
E.J. Egerton et al., “P-Type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications” J. Electronic Materials, vol. 34, No. 6, 2005, pp. 949-952.
B.J. Kwon et al., “Optical investigation of p-type ZnO epilayers doped with different phosphorus concentrations by radio-frequency magnetron sputtering” Applied Physics Letters. vol. 91, No. 6, Aug. 6, 2007, pp. 061903-1-061903.
C. Bundesmann et al, “Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li”, Applied Physics Letters, vol. 83, No. 10, Sep. 8, 2003, whole document.
Jianhua Hu et al., “Textured fluorine-doped ZnO films by atmospheric pressure chemical vapor deposition and their use in amorphous silicon solar cells”, Solar Cells, vol. 30, ¼, May 30, 1991, pp. 437-450.
X.L. Chen et al, “Boron-doped zink oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition” Thin Solid Films, vol. 515, No. 7-8, Feb. 15, 2007 Elsevier-Sequoia S.A. (whole document).
Chongmu Lee, et al., “dependence of the electrical properties of the ZnO thin films grown by atomic layer epitaxy on the reactant feed sequence,” J. Vac. Sci. Technol. A 24(4), Jul./Aug. 2006, pp. 1031-1035.

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