Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-15
2006-08-15
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C438S243000, C438S421000, C257S330000, C257S301000, C257S396000
Reexamination Certificate
active
07091092
ABSTRACT:
A method for forming a self-aligned, recessed channel, MOSFET device that alleviates problems due to short channel and hot carrier effects while reducing inter-electrode capacitance is described. A thin pad oxide layer is grown overlying the substrate and a gate recess, followed by deposition of a thick silicon nitride layer filling the gate recess. The top surface is planarized exposing the pad oxide layer. An additional oxide layer is grown, thickening the pad oxide layer. A portion of the silicon nitride layer is etched away and additional oxide layer is again grown. This forms a tapered oxide layer along the sidewalls of the gate recess. The remaining silicon nitride layer is removed. The oxide layer at the bottom of the gate recess is removed and a gate dielectric layer is grown. Gate polysilicon is deposited filling the gate recess. S/D implantations, metallization, and passivation complete fabrication of the device.
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Lau C. K.
Lee James
Poh Francis
Samudra Ganesh Shankar
See Alex
Ackerman Stephen B.
Chartered Semiconductor Manufacturing Ltd.
National University of Singapore
Pike Rosemary L. S.
Saile Ackerman LLC
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