Process and apparatus for producing silicon ingots having high o

Details Process and apparatus for producing silicon ingots having high o Process and apparatus for producing silicon ingots having high o

1990-10-02

1992-02-18

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

15662073, 15662074, 156DIG64, 156DIG68, 422250, 422251, 148 33, 148 336, C30B 1300

Patent

active

050890824

ABSTRACT:
Silicon ingots, in particular, with diameters of approximately 75 mm and greater, can be produced by zone pulling with an oxygen content comparable to crucible-pulled material if a flat quartz element is brought into contact with the molten cap during the pulling operation. A quartz ring which is arranged concentrically beneath the induction heating coil and can be lowered from a rest position into its working position on the molten cap is suitable as a flat element. The ingot material obtained in this manner and also the silicon wafers produced therefrom combine the purity advantages of zone-pulled silicon with the beneficial gettering and hardening action of the incorporated oxygen which otherwise distinguishes only crucible-pulled silicon.

REFERENCES:
patent: 3342970 (1967-09-01), Emeis
patent: 3453352 (1969-07-01), Goundry
Brissot et al., "Preparation of Artificial Calcite Single Crystals by Solt Zone Melting"; Journal of Crystals 8(1971) pp. 213-215.
Proposed Floating-Zone, Immersed-Heater Method for the Growth of Trigonal Selenium Single Crystals; Swinehart; Journal of Crystal Growth 26 (1974) pp. 317-318.

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