Process and apparatus for etching semiconductor surfaces

Details Process and apparatus for etching semiconductor surfaces Process and apparatus for etching semiconductor surfaces

1988-08-08

1990-11-20

Simmons, David

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 156642, 252 792, 252 793, H01L 21306

Patent

active

049716549

ABSTRACT:
A process and apparatus for etching semiconductor surfaces, in particular, ilicon, with a mixture containing nitrogen-oxygen based compounds as oxidizing compounds, hydrofluoric acid as the component which dissolves the oxidation product, and sulfuric acid, optionally with phosphoric acid added, as a carrier medium. This mixture makes it possible to design the process as a cyclic process in which oxygen supplied to the system ultimately effects an oxidation of the material to be etched, and the product of its oxidation is removed from the circuit. The process is noteworthy for its low usage of reagents and because it is not harmful to the environment.

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patent: 4601780 (1986-07-01), Coggins et al.
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patent: 4747907 (1988-05-01), Acocella et al.
patent: 4806192 (1989-02-01), Haas
patent: 4826605 (1989-05-01), Doble et al.

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