Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-07-30
1999-02-02
Booth, Richard A.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438303, 438305, 438963, H01L 218238, H01L 21336
Patent
active
058664483
ABSTRACT:
A method for fabrication of a lightly-doped-drain (LDD) structure for self aligned polysilicon gate MOSFETs is described wherein a polymer layer, formed along the sidewall during the patterning process of the polysilicon gate electrode, is used to mask the source/drain ion implant. The sidewall polymer layer replaces the conventional silicon oxide sidewall as an LDD spacer and offers improved thickness control as well as an improved sequence of processing steps whereby the deposition of a spacer oxide layer onto the gate oxide is eliminated. A cap oxide layer first deposited over the gate polysilicon layer. This oxide layer is then patterned and etched using RIE under conditions which form a polymer sidewall layer along the edges of the cap oxide pattern. The polysilicon layer is then etched, and has a pattern concentric with the cap oxide pattern but wider by the thickness of the polymer sidewall. After removal of the polymer and residual photoresist, the source/drain implant is performed, followed by removal of the polysilicon lip by RIE using the cap oxide as a mask. The LDD implant is then performed.
REFERENCES:
patent: 4975385 (1990-12-01), Beinglass et al.
patent: 5188980 (1993-02-01), Lai
patent: 5368686 (1994-11-01), Tatsumi et al.
patent: 5451291 (1995-09-01), Park et al.
patent: 5468665 (1995-11-01), Lee et al.
patent: 5472890 (1995-12-01), Oda
patent: 5518970 (1996-05-01), Hoda et al.
patent: 5563098 (1996-10-01), Kuo et al.
patent: 5656523 (1997-08-01), Wilhoit
patent: 5698072 (1997-12-01), Fukuda
patent: 5753557 (1998-05-01), Tseng
S. Wolf, "Silicon Processing For The VLSI Era--vol. 12" Lattice Press, Sunset Beach, CA, 1990, p. 348.
Hiang Tang Kok
Pradeep Yelehanka Ramachandramurthy
Zhou Mei Sheng
Ackerman Stephen B.
Booth Richard A.
Chartered Semiconductor Manufacturing Ltd.
Saile George O.
LandOfFree
Procedure for forming a lightly-doped-drain structure using poly does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Procedure for forming a lightly-doped-drain structure using poly, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Procedure for forming a lightly-doped-drain structure using poly will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1116883