Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
1999-09-30
2002-03-05
Quach, T. N. (Department: 2814)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C324S754090
Reexamination Certificate
active
06352871
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates generally to semiconductor devices, and more particularly, to techniques for analyzing and debugging circuitry within an integrated circuit device.
BACKGROUND OF THE INVENTION
The semiconductor industry has recently experienced technological advances that have permitted dramatic increases in circuit density and complexity, and equally dramatic decreases in power consumption and package sizes. Present semiconductor technology now permits single-chip microprocessors with many millions of transistors, operating at speeds of hundreds of millions of instructions per second to be packaged in relatively small, air-cooled semiconductor device packages. A by-product of such high-density and high functionality in semiconductor devices has been the demand for increased numbers of external electrical connections to be present on the exterior of the die and on the exterior of the semiconductor packages which receive the die, for connecting the packaged device to external systems, such as a printed circuit board.
As the manufacturing processes for semiconductor devices and integrated circuits increase in difficulty, methods for testing and debugging these devices become increasingly important. Not only is it important to ensure that individual chips are functional, it is also important to ensure that batches of chips perform consistently. In addition, the ability to detect a defective manufacturing process early is helpful for reducing the number of defective devices manufactured.
Traditionally, integrated circuits have been excited for testing using methods including powering the device via external contacts, or directly accessing circuitry or devices within the integrated circuit. External contacts on integrated circuit devices can and have been used for powering the device for analysis, however, using such external contacts is limited because individual excitation of portions of circuitry within the device is difficult. Directly accessing and exciting the circuitry is useful for stimulating individual portions of circuitry within the device, but is difficult for several reasons. For instance, existing methods do not readily facilitate access to various portions of an integrated circuit simultaneously. In addition, the close proximity of circuitry and devices, particularly as the device sizes decrease and circuit density increases with advancing technology, make it difficult to excite portions of densely populated circuit areas.
One type of integrated circuit device for which exciting various portions of the circuit is difficult is the flip-chip type device. In flip-chips, transistors and other circuitry are located in a very thin epitaxially-grown silicon layer in a circuit side of the die. The circuit side of the die is arranged face-down on a package substrate. This orientation provides many operational advantages. However, due to the face-down orientation of the circuit side of the die, the transistors and other circuitry near the circuit side are not readily accessible for testing, modification, or other purposes. Therefore, access to the transistors and circuitry near the circuit side is from the back side of the chip. Since access to the transistors and circuitry in flip-chips is generally from the back side of the chip, it is often necessary to mill through the back side and probe certain circuit elements in order to excite the device. Maintaining accuracy while milling to the circuitry in the die is difficult and time-consuming.
Often, the area between transistors and other circuitry in flip-chips and other integrated circuit devices is very small. Providing power and exciting portions of the device between such circuitry and devices is difficult to achieve without contacting the devices between which the probes are formed and potentially causing damage. In addition, typical probes are not small enough to enable the addition of a plurality of such probes in relatively small spaces. These and other difficulties inhibit the excitation of devices located in various portions of a semiconductor die. A related inhibition to the analysis of semiconductor devices is the lack of a readily usable manner in which to excite circuitry in locations throughout the device. This problem continually worsens as the amount of circuitry within a typical semiconductor device number into the millions and are formed at distances between each other ranging in the micron or sub-micron level.
SUMMARY OF THE INVENTION
The present invention is directed to a method and system for forming a grid in a semiconductor device for improving analysis of the device involving using the grid to excite various portions of the circuitry. The present invention is exemplified in a number of implementations and applications, some of which are summarized below.
According to an example embodiment of the present invention, a grid having several elongated narrow conductive via probes is formed in a semiconductor device having circuitry in a circuit side opposite a back side. The grid is created by forming a plurality of probe points extending over target circuitry in the semiconductor device. A target node in the circuitry is excited by exciting part of the grid coupled to the target node.
According to another example embodiment of the present invention, a system is arranged for analyzing a semiconductor device having circuitry in a circuit side opposite a back side. The system includes a substrate removal device adapted to remove substrate from the semiconductor device and form an exposed region over a target node. An ion deposition device is also included and is adapted to form a grid having a plurality of probe points extending over the target node. A testing arrangement is adapted to use the grid and to excite the device.
The above summary of the present invention is not intended to describe each illustrated embodiment or every implementation of the present invention. The figures and detailed description which follow more particularly exemplify these embodiments.
REFERENCES:
patent: 5523252 (1996-06-01), Saito
patent: 6040706 (2000-03-01), Tsuura
patent: 6130104 (2000-10-01), Yamasaka
Birdsley Jeffrey D.
Bruce Michael R.
Davis Brennan V.
Gilfeather Glen
Goruganthu Rama R.
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