Primary ion beam raster gating technique for secondary ion mass

Details Primary ion beam raster gating technique for secondary ion mass Primary ion beam raster gating technique for secondary ion mass

1984-10-24

1987-04-28

Anderson, Bruce C.

Radiant energy

Inspection of solids or liquids by charged particles

Positive ion probe or microscope type

250306, 250307, G01N 2300

Patent

active

046617027

ABSTRACT:
A primary ion beam raster gating technique for secondary ion mass spectrometer system is disclosed. The system includes a primary ion gun which raster scans an area of the surface being tested which sputter etches a crater. After the crater is formed, a beam blanking circuit causes the beam to scan a smaller area at the bottom of the first crater thereby sputter etching a second smaller crater. During this phase, the ion beam does not hit the side wall of the first crater so that errors are not introduced into secondary ion measurement from the bottom of the second crater due to material from the side wall of the first crater being sputtered into the second crater.

REFERENCES:
patent: 3881108 (1975-04-01), Kondo et al.
patent: 3916190 (1975-10-01), Valentine et al.
patent: 4132892 (1979-01-01), Wittmaack
patent: 4510387 (1985-04-01), Izumi et al.

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