Prevention of backside cracks in semiconductor chips or...

Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating

Reexamination Certificate

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C438S689000, C438S695000, C438S704000, C438S745000, C438S748000, C438S750000, C438S508000

Reexamination Certificate

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07405139

ABSTRACT:
A method of preventing the formation of cracks on the backside of a silicon (Si) semiconductor chip or wafer during the processing thereof. Also provided is a method for inhibiting the propagation of cracks, which have already formed in the backside of a silicon chip during the processing thereof and prior to the joining thereto of a substrate during the fabrication of an electronic package. The methods entail either treating the backside with a wet etch, or alternatively, applying a protective film layer thereon prior to forming an electronic package incorporating the chip or wafer.

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patent: 2006/0032834 (2006-02-01), Iguchi et al.
patent: 06053204 (1994-02-01), None
patent: 2004282035 (2004-10-01), None

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