Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2006-08-03
2008-07-29
Pham, Thanh V (Department: 2823)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S689000, C438S695000, C438S704000, C438S745000, C438S748000, C438S750000, C438S508000
Reexamination Certificate
active
07405139
ABSTRACT:
A method of preventing the formation of cracks on the backside of a silicon (Si) semiconductor chip or wafer during the processing thereof. Also provided is a method for inhibiting the propagation of cracks, which have already formed in the backside of a silicon chip during the processing thereof and prior to the joining thereto of a substrate during the fabrication of an electronic package. The methods entail either treating the backside with a wet etch, or alternatively, applying a protective film layer thereon prior to forming an electronic package incorporating the chip or wafer.
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Daubenspeck Timothy H.
Gambino Jeffrey P.
Lasky Jerome B.
Muzzy Christopher D.
Sauter Wolfgang
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Pham Thanh V
Scully , Scott, Murphy & Presser, P.C.
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