Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-07-09
2000-10-24
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438264, 438266, H01L 218247
Patent
active
061366528
ABSTRACT:
A process for a split-gate transistor (e.g. flash-EEPROM cell), which includes a channel's drain-area, a first insulator disposed over the drain-area and a first gate disposed over the first insulator, and a control (select) gate is insulatively disposed over the channel's source-area and over a channel's gap-area located between the drain area and source area.
It includes growing a second thin thermal oxide to be in contact with the first gate and the channel's source-area and gap-area that is adjacent he channel's drain-area, depositing TEOS based LPCVD oxide on the second oxide and then depositing the control gate on the first gate and over the channel's source and gap areas.
It prevents the formation of an oxide beak under the first gate, thereby the first insulator has a uniform thickness. The polysilicon of the control gate conforms to the side wall of the first gate and does not protrude under the first gate.
The transistor programs efficiently, is reliable, has low manufacture cost and is physically and electrically down scalable.
REFERENCES:
patent: 3996657 (1976-12-01), Simko et al.
patent: 4069067 (1978-01-01), Ichinohe
patent: 4115314 (1978-09-01), Harari
patent: 4267632 (1981-05-01), Shappir
patent: 4288256 (1981-09-01), Ning et al.
patent: 4361847 (1982-11-01), Harari
patent: 4380113 (1983-04-01), Malwah
patent: 4404577 (1983-09-01), Cranford, Jr. et al.
patent: 4720323 (1988-01-01), Sato
patent: 4727043 (1988-02-01), Matsumoto et al.
patent: 4757360 (1988-07-01), Faraone
patent: 4763299 (1988-08-01), Hazani
patent: 4795719 (1989-01-01), Eitan
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4810666 (1989-03-01), Taji
patent: 4814286 (1989-03-01), Tam
patent: 4833096 (1989-05-01), Huang et al.
patent: 4845538 (1989-07-01), Hazani
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 4851365 (1989-07-01), Jeuch
patent: 4868619 (1989-09-01), Mukherjee
patent: 4892840 (1990-01-01), Esquivel et al.
patent: 5040036 (1991-08-01), Hazani
patent: 5047814 (1991-09-01), Hazani
patent: 5063172 (1991-11-01), Manley
patent: 5095344 (1992-03-01), Harari
patent: 5098855 (1992-03-01), Komori et al.
patent: 5099297 (1992-03-01), Hazani
patent: 5162247 (1992-11-01), Hazani
patent: 5166904 (1992-11-01), Hazani
patent: 5200351 (1993-04-01), Hadjizadeh-Amini
patent: 5242848 (1993-09-01), Yeh
patent: 5278785 (1994-07-01), Hazani
patent: 5304505 (1994-04-01), Hazani
patent: 5332914 (1991-10-01), Hazani
patent: 5440518 (1995-08-01), Hazani
patent: 5665620 (1997-09-01), Nguyen et al.
R.S. Muller & T.I. Kamins, Device Electronics for Integrated Circuits, 1977, pp 42-52 and pp 383-387.
T. Kamins, "Polycrystalline Silicon For Integrated Circuit Applications", Kluwer Academic Publishers, pp. 134-141, published 1988.
B. Kwong et al., "Novram Reliability Report", Xivor 1985 Databook, RR-502A, p. 6-1, and pp. 6-4 through 6-7, and p. 6-16, Fev. 1985.
S. Morie et al., "Reliable CVD Inter-Poly Dielectrics For Advanced E&EPROM", 1985 Symposium On VLSI Technology, pp 16-17, May 14-17, May 14-16, 1985.
P. Burgeraff, "Lithography's Leading Edge, Part 1: Phase Shift Technology", Semiconductor International, pp 42-47, Feb. 1992.
Y.C. See et al., "An Alignment-Tolerant Contanct Process Using Landing Pads", Motorola Inc. Technical Developments, vol. 12, pp 17-18, , Apr. 1991.
S. Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, pp. 371-400, 1983.
D.K. Brown et al., "Flaws in Sidewall Oxides Grown on Polysilicon Gate", J. Electrochem. Soc., pp 1084-1089, May 1982.
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