Preventing damage to low-k materials during resist stripping

Details Preventing damage to low-k materials during resist stripping Preventing damage to low-k materials during resist stripping

2007-06-05

2007-06-05

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S689000, C438S694000, C438S695000, C438S696000, C257SE21026

Reexamination Certificate

active

10866382

ABSTRACT:
A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.

REFERENCES:
patent: 6413877 (2002-07-01), Annapragada
patent: 2002/0173160 (2002-11-01), Keil et al.
patent: 2003/0064601 (2003-04-01), Thompson
patent: 2003/0129539 (2003-07-01), Tsai et al.
patent: 2004/0018715 (2004-01-01), Sun et al.
patent: 2004/0087135 (2004-05-01), Canaperi et al.
patent: 2004/0192058 (2004-09-01), Chu et al.
patent: 2006/0199370 (2006-09-01), Dai et al.
U.S. Appl. No. 10/738,280, filed Dec. 16. 2003.

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