Preventing cavitation in high aspect ratio dielectric...

Details Preventing cavitation in high aspect ratio dielectric... Preventing cavitation in high aspect ratio dielectric...

2004-06-28

2008-12-02

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S639000, C438S640000, C438S643000

Reexamination Certificate

active

07459384

ABSTRACT:
Methods for preventing cavitation in high aspect ratio dielectric regions in a semiconductor device, and the device so formed, are disclosed. The invention includes depositing a first dielectric in the high aspect ratio dielectric region between a pair of structures, and then removing the first dielectric to form a bearing surface adjacent each structure. The bearing surface prevents cavitation of the interlayer dielectric that subsequently fills the high aspect ratio region.

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