Pressure sensor

Details Pressure sensor Pressure sensor

2006-11-14

2006-11-14

Smith, Bradley K. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S418000, C257SE29324, C361S283400, C073S861420, C073S718000, C073S724000, C438S053000

Reexamination Certificate

active

07135749

ABSTRACT:
A pressure sensor includes a silicon-on-insulator (SOI) substrate, a glass substrate bonded to the SOI substrate by anode bonding, a silicon island formed on a part of a silicon layer of the SOI substrate and surrounded by a groove extending to an insulating layer of the SOI substrate, a through hole formed in the glass substrate, and an output electrode that is made of a conductive material, is disposed inside the through hole, and is electrically connected to an electrode formed on the glass substrate via the silicon island.

REFERENCES:
patent: 4701826 (1987-10-01), Mikkor
patent: 5369544 (1994-11-01), Mastrangelo
patent: 5585311 (1996-12-01), Ko
patent: 5740594 (1998-04-01), Lukasiewicz et al.
patent: 6109113 (2000-08-01), Chavan et al.
patent: 6122973 (2000-09-01), Nomura et al.
patent: 6382030 (2002-05-01), Kihara et al.
patent: 6445053 (2002-09-01), Cho
patent: 6564643 (2003-05-01), Horie et al.
patent: 6578427 (2003-06-01), Hegner
patent: 7080560 (2006-07-01), Takizawa et al.
patent: 4-9727 (1992-01-01), None

Affiliated with

Also associated with

Rating

Pressure sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pressure sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pressure sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3693092