Pressure-resistant thermal reactor system for semiconductor proc

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118715, 118725, 118728, 118733, 427 55, C23C 1600

Patent

active

049209183

ABSTRACT:
A thermal reactor system for semiconductor processing incorporates a reaction vessel with a rectangular quartz tube with reinforcing parallel quartz gussets. The gussets enable sub-ambient pressure processing, while the rectangular tube maximizes reactant gas flow uniformity over a wafer being processed. The gussets facilitate effective cooling, while minimally impairing heating of the wafer by allowing minimal wall thickness. The thermal reactor system further includes a gas source for supplying reactant gas and an exhaust handling system for removing spent gases from and establishing a reduced pressure within the reaction vessel. An array of infrared lamps is used to radiate energy through the quartz tube; the lamps are arranged in a staggered relation relative to the quartz gussets to minimize shadowing. In addition, other non-cylindrical gusseted vessel geometries are disclosed which provide for improved sub-ambient pressure thermal processing of semiconductor wafers.

REFERENCES:
patent: 3623712 (1971-11-01), McNeilly
patent: 3830194 (1974-08-01), Benzing et al.
patent: 4047496 (1977-09-01), McNeilly et al.
patent: 4081313 (1978-03-01), McNeilly et al.
patent: 4496609 (1985-01-01), McNeilly et al.
patent: 4803948 (1989-02-01), Nakagawa et al.
Deacon, Tom, "Silicon Epitaxy: An Overview", Applied Materials, Inc. brochure, HI-022 (1984).
"Series 6000 High Volume Epitaxial Reactor System", Applied Materials, Inc. product specifications (1976).
"AMC 7810 and 7820 Radiantly Heated Epitaxial Reactor Systems" Applied Materials, Inc. product specifications (Aug. 1984).
"Epsilon One .TM. Single Wafer Epitaxial Reactor," ASM International brochure (1988).
"A New Generation", Applied Materials, Inc. brochure for Precision Epi 7010 (1986).
"Out of This World," Applied Materials, Inc. brochure for RPCVD-3.
Doo, V. Y. et al., "Rectangular Vapor-Growth Reactor", IBM Technical Disclosure Bulletin, vol. 8, No. 12 (May 1966) p. 1841.
Gardiner, J. R. and V. Y. Doo, "Chemical Vapor Deposition Reactor", IBM Technical Disclosure Bulletin, vol. 13, No. 2 (Jul. 1970) p. 427.
"Heatpulse .TM. 2101/2106", AG Associates brochure.
"RTP-800 Rapid Thermal Processor", Varian Associates, Inc. Extrion Division brochure (Dec. 1985).
"Series 7600 Epitaxial Reactor System", Applied Materials, Inc. brochure (1979).
"AMC-7810/11 and AMC-7820/21 Cylindrical Epitaxial Reactors", Applied Materials, Inc. manual, chapter 1, pp. 1-1 to 1-32.

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