Pressure-resistant thermal reactor system for semiconductor proc

Details Pressure-resistant thermal reactor system for semiconductor proc Pressure-resistant thermal reactor system for semiconductor proc

1989-04-18

1990-05-01

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118725, 118728, 118733, 427 55, C23C 1600

Patent

active

049209183

ABSTRACT:
A thermal reactor system for semiconductor processing incorporates a reaction vessel with a rectangular quartz tube with reinforcing parallel quartz gussets. The gussets enable sub-ambient pressure processing, while the rectangular tube maximizes reactant gas flow uniformity over a wafer being processed. The gussets facilitate effective cooling, while minimally impairing heating of the wafer by allowing minimal wall thickness. The thermal reactor system further includes a gas source for supplying reactant gas and an exhaust handling system for removing spent gases from and establishing a reduced pressure within the reaction vessel. An array of infrared lamps is used to radiate energy through the quartz tube; the lamps are arranged in a staggered relation relative to the quartz gussets to minimize shadowing. In addition, other non-cylindrical gusseted vessel geometries are disclosed which provide for improved sub-ambient pressure thermal processing of semiconductor wafers.

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