Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-27
2007-03-27
Owens, Douglas W. (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S309000
Reexamination Certificate
active
10302256
ABSTRACT:
The concept of the present invention describes a semiconductor device with a junction504between a lightly doped region501and a heavily doped region502, wherein the junction has an elongated portion504aand curved portions504b. The doping concentration of the lightly doped region is configured so that it exhibits higher resistivity in the proximity510of the curved portion by an amount suitable to lower the electric field strength during device operation and thus to offset the increased field strength caused by the curved portion. As a consequence, the device breakdown voltage in the curved junction portion becomes equal to or greater than the breakdown voltage in the linear portion.
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Bolkhovsky Vladimir
Efland Taylor R.
Hower Philip L.
Lin John
Pendharkar Sameer
Brady III W. James
McLarty Peter K.
Owens Douglas W.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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