Preheating of chemical vapor deposition precursors

Details Preheating of chemical vapor deposition precursors Preheating of chemical vapor deposition precursors

2006-09-12

2006-09-12

Meeks, Timothy (Department: 1762)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000, C427S255391, C427S255394

Reexamination Certificate

active

07105441

ABSTRACT:
Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

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