Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing
Patent
1997-01-07
2000-07-18
Shaver, Paul F.
Organic compounds -- part of the class 532-570 series
Organic compounds
Heavy metal containing
556 10, 4272481, 427250, 427252, 106 126, C07F 708, C07F 108
Patent
active
060909609
ABSTRACT:
A method of applying chemical vapor deposition (CVD) copper (Cu) to integrated circuit substrates using a precursor with either a dimethoxymethylvinylsilane (dmomvs), or methoxydimethylvinylsilane (modmvs), silylolefin ligand bonded to (hfac)Cu is provided. The dmomvs ligand is able to provide the electrons of oxygen atoms from two methoxy groups to improve the bond between the ligand and the (hfac)Cu complex. The improved bond helps insure that the ligand separates from the (hfac)Cu complex at consistent temperatures when Cu is to be deposited. In situations where a precursor having a smaller molecular weight is desired, the modmvs ligand is used to provide electrons from the oxygen atom of the single methoxy group. In the preferred embodiment, water vapor is added to the volatile precursor to improve the conductivity of the deposited Cu. Other embodiments provide a precursor blend made from additional silylolefins, hexafluoroacetylacetone (H-hfac), and water, either separately, or in combinations, to enhance deposition rate, conductivity, and precursor stability. A Cu precursor compound including the dmomvs and modmvs ligands with (hfac)Cu is also provided.
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Charneski Lawrence J.
Kobayashi Masato
Nguyen Tue
Senzaki Yoshihide
Maliszewski Gerald
Sharp Kabushiki Kaisha
Sharp Laboratories of America Inc.
Shaver Paul F.
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