Precursor for hafnium oxide layer and method for forming...

Details Precursor for hafnium oxide layer and method for forming... Precursor for hafnium oxide layer and method for forming...

2008-07-15

2008-07-15

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S680000, C257SE21090

Reexamination Certificate

active

07399716

ABSTRACT:
A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl4.

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Official Action issued by the Patent Office of the People's Republic of China in corresponding Chinese Patent Application No. 031530850, Apr. 6, 2007; and English translation thereof.

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