Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-03-19
1999-12-28
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438253, H01L 218242
Patent
active
060080833
ABSTRACT:
A precision analog metal-metal capacitor is fabricated by forming a first capacitor plate in an insulation layer by forming a trench therein, depositing metal within the trench and planarizing the device. A thin dielectric layer is then deposited and patterned over the first capacitor plate. A second insulator is then deposited over the device and discrete openings etched therein to expose the insulation layer and first metal plate. Metal is deposited within the openings and planarized, thereby forming a contact to the first metal plate and the second metal plate of the capacitor.
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Brabazon Terry J.
El-Kareh Badih
Kaanta Carter W.
Martin Stuart R.
Rutten Matthew J.
Chang Joni
International Business Machines - Corporation
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