Precharge voltage generator

Details Precharge voltage generator Precharge voltage generator

1994-12-19

1997-06-03

Zarabian, A.

Static information storage and retrieval

Read/write circuit

Precharge

365226, G11C 1124

Patent

active

056361696

ABSTRACT:
An improved precharge voltage generator for a semiconductor memory device having a bit line connected to a plurality of memory cell arrays. The improved precharge voltage generator employs a voltage divider for dividing a supply voltage and supplying the divided voltage as a precharge voltage signal to the bit line, and a first control current sink connected in parallel to the voltage divider to increase an amount of current of the precharge voltage signal to be supplied to the bit line in an active mode of the semiconductor memory device. The improved precharge voltage generator can use a second control current sink connected in parallel to the voltage divider to increase the current amount of the precharge voltage signal to be supplied to the bit line for a predetermined time period from an end time point of the active mode of the semiconductor memory device. According to the present invention, the improved precharge voltage generator can enhance the equalizing speed of the bit line of the semiconductor memory device to enhance the successive data access speed of the semiconductor memory device.

REFERENCES:
patent: 4941128 (1990-07-01), Wada
patent: 5113088 (1992-05-01), Yamamoto
patent: 5255232 (1993-10-01), Foss
patent: 5315554 (1994-05-01), Nanba

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