Static information storage and retrieval – Read/write circuit – Precharge
Patent
1987-12-17
1990-11-20
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Precharge
36523003, 3652335, G11C 700
Patent
active
049723731
ABSTRACT:
A precharge system of the divided bit line types for a SRAM (Static Random Access Memory) reduces the active current consumption and bit line peak current by decreasing the number of bit lines to be precharged at any one time during a precharge cycle. For this, the system has a block selection signal generator that responds to certain column addresses with a block selection signal. A sub-block selection signal generator responds to certain addresses among the remaining column addresses with a sub-block selection signal. A precharge decoder responds to pulses from the pulse generator and the block selection signal with a block selection precharge signal. A divided bit line precharge decoder responds to the sub-block selection signal and block selection precharge signal with a pulse for precharging only a certain sub-block of a certain block of the array of memory cells of the SRAM. A column predecoder responds to the block and sub-block selection signals with a block selecting pulse, and a column decoder responds to the block selecting pulse and the remaining column addresses to connect certain bit lines of the sub-block with a data line. The advantages of this are to reduce the power consumption of such a SRAM chip, and the noise in its power supply voltage, by precharging of only a portion of the whole number of bit lines at any one time.
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Kim Byeong-Yun
Kwark Choong-Keun
Park Hee-Choul
Popek Joseph A.
Samsung Semiconductors & Telecommunications Co., Ltd.
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