Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-06-06
2006-06-06
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S229000
Reexamination Certificate
active
07057952
ABSTRACT:
A precharge control circuit of a pseudo SRAM including a precharge set signal generation unit configured to output a precharge set signal, a precharge standby signal generation unit configured to output a precharge standby signal, a precharge signal output unit configured to output a precharge signal in response to the precharge set signal and the precharge standby signal, a first precharge control unit configured to forcedly control the output signal of the precharge standby signal generation unit such that the precharge signal is generated in a period where a chip select signal is disabled, in the case where the chip select signal is disabled long for a first time, and a second precharge control unit configured to forcedly control the output signal of the precharge standby signal generation unit such that the precharge signal is generated in a period where the chip select signal is disabled, in the case where the chip select signal is disabled long for a second time longer than the first time, wherein the precharge signal is generated in response to the operation of the first precharge control unit or the second precharge control unit.
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patent: 2004/0263206 (2004-12-01), Liu
Kwon Tae Woo
Lee Yin Jae
Hynix / Semiconductor Inc.
Le Thong Q.
Marshall & Gerstein & Borun LLP
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