Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-09-30
2008-09-30
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S233100, C365S190000
Reexamination Certificate
active
11584642
ABSTRACT:
A precharge circuit prevents voltage dropping of a local input/output line in a semiconductor memory apparatus. The precharge circuit includes at least one pair of pull-up and pull-down precharge circuits. When a local input/output line precharge signal is enabled, a precharge voltage to be applied to each of the precharge circuits is supplied to a local input/output line and a local input/output line-bar. The pull-up precharge circuit has P-type MOS transistors, and the pull-down precharge circuit has N-type transistors. With this configuration, dropping of precharge voltage levels of local input/output lines can be prevented, thus improving reliability of the memory apparatus.
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Auduong Gene N.
Hynix / Semiconductor Inc.
Kaminski Jeffri A.
Venable LLP
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