Precharge and evaluation phase circuits for sense amplifiers

Details Precharge and evaluation phase circuits for sense amplifiers Precharge and evaluation phase circuits for sense amplifiers

2008-07-16

2010-11-02

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Precharge

C365S207000

Reexamination Certificate

active

07826291

ABSTRACT:
A precharge and evaluation circuit for a memory sense amplifier includes a first precharge-phase transistor having a source coupled to a power-supply potential, a gate coupled to a precharge control line, and a drain. A second precharge-phase transistor has a drain coupled to the drain of the first precharge-phase transistor, a source, and a gate coupled to the source through a feedback circuit. A first read-phase transistor has a source coupled to the power-supply potential, and a gate and drain coupled to a comparator. A second read-phase transistor has a drain coupled to the drain of the first read-phase transistor, a source coupled to the source of the second precharge-phase transistor, and a gate coupled to the source of the second read-phase transistor through a feedback circuit. A column decoder is coupled to the sources of the second precharge-phase and second read-phase transistors.

REFERENCES:
patent: 6108256 (2000-08-01), Schneider
patent: 6856547 (2005-02-01), Poidomani et al.
patent: 7088626 (2006-08-01), Mori et al.

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