Pre-pattern surface modification of low-k dielectrics

Details Pre-pattern surface modification of low-k dielectrics Pre-pattern surface modification of low-k dielectrics

2005-03-01

2005-03-01

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S638000, C438S672000

Reexamination Certificate

active

06861348

ABSTRACT:
A low-k dielectric layer (104) is treated with a dry-wet (D-W) or dry-wet-dry (D-W-D) process to improve patterning Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130). The D-W or D-W-D treatment is performed to either pretreat a low-k dielectric (104) before forming the pattern (130) or during a rework of the pattern (130).

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