PRAM and method of firing memory cells

Details PRAM and method of firing memory cells PRAM and method of firing memory cells

2007-11-01

2010-06-29

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S201000

Reexamination Certificate

active

07746688

ABSTRACT:
A PRAM includes a memory cell array of phase change memory cells, and a write circuit receiving an externally provided first voltage and supplying a write pulse for writing data to the memory cells in a normal operation mode. The write circuit also receives an externally provided second voltage higher than the first voltage and supplies a firing pulse to at least one firing-failed phase change memory cell.

REFERENCES:
patent: 5912839 (1999-06-01), Ovshinsky et al.
patent: 6075719 (2000-06-01), Lowrey et al.
patent: 2005/0052904 (2005-03-01), Cho et al.
patent: 2006/0181922 (2006-08-01), Dodge et al.
patent: 2006/0197115 (2006-09-01), Toda
patent: 1020040014198 (2004-02-01), None
patent: 1020040096587 (2004-11-01), None
patent: 1020050025730 (2005-03-01), None
patent: 1020050030294 (2005-03-01), None
patent: 1020060016312 (2006-02-01), None
patent: 1020060045790 (2006-05-01), None

Affiliated with

Also associated with

Rating

PRAM and method of firing memory cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with PRAM and method of firing memory cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and PRAM and method of firing memory cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4242801