Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2005-09-13
2005-09-13
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S195000, C438S275000
Reexamination Certificate
active
06943069
ABSTRACT:
A power control system (25) uses two separate currents to control a startup operation of the power control system (25). The two currents are shunted to ground to inhibit operation of the power control system (25) and one of the two currents is disabled to minimize power dissipation. The two independently controlled currents are generated by a multiple output current high voltage device (12) responsively to two separate control signals (23, 24).
REFERENCES:
patent: 5477175 (1995-12-01), Tisinger et al.
patent: 6020227 (2000-02-01), Bulucea
Halamik Josef
Hall Jefferson W.
Booth Richard A.
Hightower Robert F.
Semiconductor Components Industries L.L.C.
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