Power semiconductor switching element

Details Power semiconductor switching element Power semiconductor switching element

2006-06-27

2006-06-27

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S502000

Reexamination Certificate

active

07067870

ABSTRACT:
A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.

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patent: 2000-349288 (2000-12-01), None
Merchant, S., “Dependence of Breakdown Voltage on Drift Length and Buried Oxide Thickness of SOI RESURF LDMOS Transistors,”Institute of Electrical and Electronics Engineers, 1993, pp. 124-128.

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