Power semiconductor element capable of improving short...

Details Power semiconductor element capable of improving short... Power semiconductor element capable of improving short...

2005-07-26

2005-07-26

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S228000, C257S399000

Reexamination Certificate

active

06921687

ABSTRACT:
In a p-type base layer of a trench IGBT comprising a p-type collector layer, an n-type base layer formed on the p-type collector layer, the p-type base layer formed on the n-type base layer, and an n-type emitter layer formed on the surface of the p-type base layer, the point of the highest impurity concentration is located closer to the n-type base layer than the junction with the emitter layer. In other words, the pinch-off of the channel is generated in the position closer to the n-type base layer than to the junction between the p-type base layer and the n-type emitter layer.

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patent: 6001678 (1999-12-01), Takahashi
patent: 6060731 (2000-05-01), Murata et al.
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patent: 6380586 (2002-04-01), Yoshikawa
patent: 6501128 (2002-12-01), Otsuki
patent: 9-36359 (1997-02-01), None

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