Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2003-06-10
2008-10-07
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S195000, C438S212000, C438S268000, C257S263000, C257S342000, C257SE29257
Reexamination Certificate
active
07432145
ABSTRACT:
A low on-state resistance power semiconductor device has a shape and an arrangement that increase the channel density and the breakdown voltage The power semiconductor device comprises a plurality of individual cells formed on a semiconductor substrate (62). Each individual cell comprises a plurality of radially extending branches (80) having source regions (37) within base regions (36). The plurality of individual cells are arranged such that at least one branch of each cell extends towards at least one branch of an adjacent cell and wherein the base region (36) of the extending branches merge together to form a single and substantially uniformly doped base region (36) surrounding drain islands (39) at the surface of the semiconductor substrate (62).
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Deram Ivana
Feybesse Adeline
Reynes Jean-Michel
Freescale Semiconductor Inc.
Ingham John C
Weiss Howard
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