Power semiconductor device with a base region and method of...

Details Power semiconductor device with a base region and method of... Power semiconductor device with a base region and method of...

2003-06-10

2008-10-07

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S195000, C438S212000, C438S268000, C257S263000, C257S342000, C257SE29257

Reexamination Certificate

active

07432145

ABSTRACT:
A low on-state resistance power semiconductor device has a shape and an arrangement that increase the channel density and the breakdown voltage The power semiconductor device comprises a plurality of individual cells formed on a semiconductor substrate (62). Each individual cell comprises a plurality of radially extending branches (80) having source regions (37) within base regions (36). The plurality of individual cells are arranged such that at least one branch of each cell extends towards at least one branch of an adjacent cell and wherein the base region (36) of the extending branches merge together to form a single and substantially uniformly doped base region (36) surrounding drain islands (39) at the surface of the semiconductor substrate (62).

REFERENCES:
patent: 4651181 (1987-03-01), David
patent: 5399892 (1995-03-01), Neilson
patent: 5521410 (1996-05-01), Yamamoto
patent: 5631484 (1997-05-01), Tsoi et al.
patent: 5703389 (1997-12-01), Knoch et al.
patent: 01238173 (1989-09-01), None

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