Power semiconductor device and method of manufacturing the same

Details Power semiconductor device and method of manufacturing the same Power semiconductor device and method of manufacturing the same

2009-10-01

2011-11-29

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S294000, C438S295000, C438S296000, C438S297000, C438S404000, C438S591000, C438S694000, C438S776000

Reexamination Certificate

active

08067293

ABSTRACT:
A semiconductor device and a method of manufacturing the same. The method includes preparing a semiconductor substrate having high-voltage and low-voltage device regions, forming a field insulating layer in the high-voltage device region, forming a first gate oxide layer on the semiconductor substrate, exposing the semiconductor substrate in the low-voltage device region by etching part of the first gate oxide layer and also etching part of the field insulating layer to form a stepped field insulating layer, forming a second gate oxide layer on the first gate oxide layer in the high-voltage device region and on the exposed semiconductor substrate in the low-voltage device region, and forming a gate over the stepped field insulating layer and part of the second gate oxide layer in the high-voltage device region adjoining the field insulating layer.

REFERENCES:
patent: 2005/0085042 (2005-04-01), Chun et al.

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