Power semiconductor device

Details Power semiconductor device Power semiconductor device

2007-11-01

2009-10-20

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S500000

Reexamination Certificate

active

07605426

ABSTRACT:
A power semiconductor device includes: a semiconductor substrate; a gate insulating film; a control electrode insulated from the semiconductor substrate by the gate insulating film; a first main electrode provided on a lower surface side of the semiconductor substrate; and a second main electrode provided on an upper surface side of the semiconductor substrate. The semiconductor substrate includes: a first first-conductivity-type semiconductor layer with its lower surface connected to the first main electrode; a second first-conductivity-type semiconductor layer and a third second-conductivity-type semiconductor layer formed on the first first-conductivity-type semiconductor layer and alternately arranged parallel to the upper surface of the semiconductor substrate; a trench formed in a directly overlying region of the third second-conductivity-type semiconductor layer, with part of the second main electrode buried in the trench; a fourth second-conductivity-type semiconductor layer selectively formed in a surface of the second first-conductivity-type semiconductor layer and connected to the second main electrode; a fifth first-conductivity-type semiconductor layer selectively formed in a surface of the fourth second-conductivity-type semiconductor layer and connected to the second main electrode; and a sixth second-conductivity-type semiconductor layer formed at a bottom of the trench and connected to the second main electrode. Impurity concentration in the sixth second-conductivity-type semiconductor layer is higher than impurity concentration in the fourth second-conductivity-type semiconductor layer, and lower surface of the sixth second-conductivity-type semiconductor layer is located below lower surface of the fourth second-conductivity-type semiconductor layer.

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patent: 2008/0012026 (2008-01-01), Tsuji
patent: 2001-313391 (2001-11-01), None
patent: 2004-282007 (2004-10-01), None

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