Power semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S329000, C257S500000

Reexamination Certificate

active

07605426

ABSTRACT:
A power semiconductor device includes: a semiconductor substrate; a gate insulating film; a control electrode insulated from the semiconductor substrate by the gate insulating film; a first main electrode provided on a lower surface side of the semiconductor substrate; and a second main electrode provided on an upper surface side of the semiconductor substrate. The semiconductor substrate includes: a first first-conductivity-type semiconductor layer with its lower surface connected to the first main electrode; a second first-conductivity-type semiconductor layer and a third second-conductivity-type semiconductor layer formed on the first first-conductivity-type semiconductor layer and alternately arranged parallel to the upper surface of the semiconductor substrate; a trench formed in a directly overlying region of the third second-conductivity-type semiconductor layer, with part of the second main electrode buried in the trench; a fourth second-conductivity-type semiconductor layer selectively formed in a surface of the second first-conductivity-type semiconductor layer and connected to the second main electrode; a fifth first-conductivity-type semiconductor layer selectively formed in a surface of the fourth second-conductivity-type semiconductor layer and connected to the second main electrode; and a sixth second-conductivity-type semiconductor layer formed at a bottom of the trench and connected to the second main electrode. Impurity concentration in the sixth second-conductivity-type semiconductor layer is higher than impurity concentration in the fourth second-conductivity-type semiconductor layer, and lower surface of the sixth second-conductivity-type semiconductor layer is located below lower surface of the fourth second-conductivity-type semiconductor layer.

REFERENCES:
patent: 6586801 (2003-07-01), Iwamoto et al.
patent: 6768170 (2004-07-01), Zhou
patent: 6888195 (2005-05-01), Saito et al.
patent: 2004/0108568 (2004-06-01), Qu
patent: 2005/0221547 (2005-10-01), Yamauchi et al.
patent: 2007/0114602 (2007-05-01), Saito et al.
patent: 2008/0012026 (2008-01-01), Tsuji
patent: 2001-313391 (2001-11-01), None
patent: 2004-282007 (2004-10-01), None

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