Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-23
2011-08-23
Sandvik, Benjamin P (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S342000, C257SE29257, C257SE21418, C438S209000, C438S212000, C438S268000
Reexamination Certificate
active
08004049
ABSTRACT:
A device includes an array of cells, the source regions of the individual cells comprising a plurality of source region branches each extending towards a source region branch of an adjacent cell, the base regions of the individual cells comprising a corresponding plurality of base region branches merging together to form a single base region surrounding the source regions. The junctions between the merged base region and the drain region define rounded current conduction path areas for the on-state of the device between adjacent cells. Floating voltage regions of opposite conductivity type to the drain region are buried in the substrate beneath the merged base region. The features of the floating voltage regions define rings of the opposite conductivity type to the drain region that surround the current conduction paths of respective cells. The floating voltage regions include respective islands situated within the current conduction paths.
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Alves Stephane
Deram Ivana
Lopes Blandino
Margheritta Joel
Morancho Frederico
Freescale Semiconductor Inc.
Khan Farid
Sandvik Benjamin P
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