Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-05
2007-06-05
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S524000, C438S525000, C438S530000, C438S589000
Reexamination Certificate
active
11060357
ABSTRACT:
A semiconductor device includes a semiconductor substrate of a first conductivity type, on which a semiconductor layer having a trench extending in the depth direction toward the semiconductor substrate is formed. A first region of the first conductivity type is formed in the depth direction along one side of the trench in the semiconductor layer and contacts the semiconductor substrate. A second region of the first conductivity type is formed in a surface area of the semiconductor layer and close to the trench and contacts the first region. A third region of the second conductivity type is formed in the surface area of the semiconductor layer. A fourth region of the first conductivity type is formed in a surface area of the third region. A gate insulation film and a gate electrode are provided on the surface of the third region between the second region and the fourth region.
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Hodama Shinichi
Izumisawa Masaru
Kouzuki Shigeo
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Thomas Toniae M.
Wilczewski M.
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