Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-06-14
2011-06-14
Fulk, Steven J (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S337000, C257SE29256
Reexamination Certificate
active
07960239
ABSTRACT:
A power device with improved reliability and a method for producing the same is disclosed. One embodiment provides an active area having an electrical power dissipation characteristic, a metallization layer portion configured with respect to the active area so that the dissipation characteristic of the active area results in heating the metallization layer portion, the metallization layer portion being formed as a connected region. The metallization layer portion has at least one hole, fully extending through the metal layer and having a dielectric. The at least one hole is arranged so that each location of the metal layer portion is connected electrically to each other location via the metallization material of the metal layer portion.
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patent: 2004/0084761 (2004-05-01), Karthikeyan et al.
T. Smorodin et al., “Investigation and Improvement of Fast Temperature-Cycle Reliability for DMOS-Related Conductor Path Design”, Physics Symposium 2007, Proceedings, 45th Annual IEEE Inter., Apr. 15-19, 2007.
T. Smorodin et al., “Power-Cycling of DMOS-Switches Triggers Thermo-Mechanical Failure Mechanisms”, 2007.
J. Busch et al., “Key Features of a Smart Power Technology for Automotive Applications”, Infineon Technologies AG, Munich & Regensburg, Germany, 2002.
Smorodin Tobias
Stecher Matthias
Dicke Billig & Czaja, PLLC
Fulk Steven J
Infineon - Technologies AG
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