Power composite integrated semiconductor device and...

Details Power composite integrated semiconductor device and... Power composite integrated semiconductor device and...

2007-04-19

2008-08-26

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000, C438S151000, C438S653000, C438S656000, C438S666000, C438S685000, C438S687000, C438S688000

Reexamination Certificate

active

07416932

ABSTRACT:
A high-reliability power composite integrated semiconductor device uses thick copper electrodes as current collecting electrodes of a power device portion to resist wire resistance needed for reducing ON-resistance. Furthermore, wire bonding connection of the copper electrodes is secured, and also the time-lapse degradation under high temperature which causes diffusion of copper and corrosion of copper is suppressed. Still furthermore, direct bonding connection can be established to current collecting electrodes in the power device portion, and also established to a bonding pad formed on the control circuit portion in the control circuit portion. A pad area at the device peripheral portion which has been hitherto needed is reduced, so that the area of the device is saved, and the manufacturing cost is reduced.

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T. Efland et al., “Lead Frame on Chip Offers Integrated Power Bus and Bond Over Active Circuit,”Proceedings of 2001 International Symposium on Power Semiconductor Device&ICs, Osaka, pp. 65-68, 2001.

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