Post tungsten etch back anneal, to improve aluminum step coverag

Details Post tungsten etch back anneal, to improve aluminum step coverag Post tungsten etch back anneal, to improve aluminum step coverag

1996-06-10

1997-06-24

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438644, 438629, H01L 2128

Patent

active

056417101

ABSTRACT:
A process has been developed in which an aluminum based, interconnect structure overlies a tungsten plug structure, in a small diameter contact hole. The tungsten plug is formed via RIE removal of unwanted tungsten, from areas other then the contact hole using a halogen containing etchant, and using a RIE overetch cycle that created an unwanted crevice in the center of the tungsten plug. A post RIE anneal, in a nitrogen ambient removes moisture from surrounding dielectric layers and also forms a protective, nitrogen containing tungsten layer, filling the crevice in the tungsten plug. The filling of the crevice allows a planar overlying aluminum based, interconnect structure to be obtained.

REFERENCES:
patent: 5407861 (1995-04-01), Marangon et al.
patent: 5420072 (1995-05-01), Fiordalice et al.
patent: 5422310 (1995-06-01), Ito
patent: 5521121 (1996-05-01), Tsai et al.
patent: 5554563 (1996-09-01), Chu et al.

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