Post thermal treatment methods of forming high dielectric...

Details Post thermal treatment methods of forming high dielectric... Post thermal treatment methods of forming high dielectric...

2006-01-17

2009-02-24

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S770000, C438S778000

Reexamination Certificate

active

07494940

ABSTRACT:
High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.

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Notice to Submit a Response for Korean patent application 10-2003-61702 mailed on Apr. 27, 2005.

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