Post passivation interconnection schemes on top of the IC chips

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S622000, C438S624000

Reexamination Certificate

active

11273105

ABSTRACT:
A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric, a thick second layer of dielectric is created over the surface of the layer of passivation. Thick and wide interconnect lines are created in the thick second layer of dielectric. The first layer of dielectric may also be eliminated, creating the wide thick interconnect network on the surface of the layer of passivation that has been deposited over the surface of a substrate.

REFERENCES:
patent: 5108950 (1992-04-01), Wakabayashi et al.
patent: 5227012 (1993-07-01), Brandli et al.
patent: 5416356 (1995-05-01), Staudinger et al.
patent: 5478773 (1995-12-01), Dow et al.
patent: 5789303 (1998-08-01), Leung et al.
patent: 5929508 (1999-07-01), Delgado et al.
patent: 6030877 (2000-02-01), Lee et al.
patent: 6117782 (2000-09-01), Lukanc et al.
patent: 6146958 (2000-11-01), Zhao et al.
patent: 6187680 (2001-02-01), Costrini et al.
patent: 6200888 (2001-03-01), Ito et al.
patent: 6229221 (2001-05-01), Kloen et al.
patent: 6232147 (2001-05-01), Matsuki et al.
patent: 6271127 (2001-08-01), Liu et al.
patent: 6455885 (2002-09-01), Lin
patent: 6459135 (2002-10-01), Basteres et al.
patent: 6465879 (2002-10-01), Taguchi
patent: 6472745 (2002-10-01), Iizuka
patent: 6495442 (2002-12-01), Lin et al.
patent: 6501169 (2002-12-01), Aoki et al.
patent: 6544880 (2003-04-01), Akram
patent: 6545354 (2003-04-01), Aoki et al.
patent: 6636139 (2003-10-01), Tsai et al.
patent: 6734563 (2004-05-01), Lin et al.
patent: 6759275 (2004-07-01), Lee et al.
patent: 2002/0017730 (2002-02-01), Tahara et al.
patent: 2002/0158334 (2002-10-01), Vu et al.
patent: 2003/0102551 (2003-06-01), Kikuchi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Post passivation interconnection schemes on top of the IC chips does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Post passivation interconnection schemes on top of the IC chips, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Post passivation interconnection schemes on top of the IC chips will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3799348

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.