Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-12-22
2000-02-01
Fahmy, Wael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
257390, H01L 218236
Patent
active
060202416
ABSTRACT:
The present invention provides a method of manufacturing a read only memory that is code implanted late in the process after the first level metal thus reducing the turn around time to ship a customer order. The invention comprising the steps of: forming bit lines 125 and word lines 160 in a cell area 12A and MOS transistors in a peripheral area 13 of an integrated circuit; forming a first dielectric layer 300 over the surface; etching back the first dielectric layer 300 in the cell area; forming metal contacts 700 to the MOS devices in the peripheral areas 13; forming the second dielectric layer 320 over the resultant surface, storing the integrated circuit; and programming the ROM region 12A by the steps of forming a Code mask 340 with openings 340A from over portions of word lines in the cell area and implanting impurities through the openings 340A into substrate under the selected word lines 160 thereby programming the ROM device.
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Chen Pei-Hung
Chu Yi-Jing
You Jyh-Cheng
Yu Shau-Tsung
Ackerman Stephen B.
Coleman William David
Fahmy Wael
Saile George O.
Stoffel William J.
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