Post-ion implant cleaning for silicon on insulator substrate...

Details Post-ion implant cleaning for silicon on insulator substrate... Post-ion implant cleaning for silicon on insulator substrate...

2011-03-29

2011-03-29

Olsen, Allan (Department: 1716)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S001300, C216S057000, C438S745000, C257SE21483

Reexamination Certificate

active

07914623

ABSTRACT:
A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

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