Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2005-02-22
2005-02-22
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S706000
Reexamination Certificate
active
06858923
ABSTRACT:
A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
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Gaillard Frederic
Lim Tian H.
Xia Li-Qun
Yieh Ellie
Applied Materials Inc.
Nhu David
Townsend & Townsend & Crew
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