Positron beam lithography

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430330, 430326, 156643, 1566591, 156668, 21912168, 21912169, G03C 500

Patent

active

051750759

ABSTRACT:
Resist (402) is exposed by a beam of positrons (320) is an apparatus (300) similar to an electron beam lithography machine.

REFERENCES:
patent: 3457408 (1969-07-01), Alter
patent: 4430419 (1984-02-01), Harada
patent: 4992746 (1991-02-01), Martin
Howard et al, "Nanometer-Scale Fabrication Techniques", Academic Press 1982, VLSI Electronics: Microstructure Science, vol. 5, pp. 145-189.
Cleaver et al, "A Combined Electron and Ion Beam Lithography System", 1985 American Vacuum Society, J. Vac. Sci. Technol. B 3(1), Jan./Feb. 1982, pp. 144-147.

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